Extended Data Out DRAM - definition. What is Extended Data Out DRAM
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%ما هو (من)٪ 1 - تعريف

RANDOM-ACCESS MEMORY THAT STORES EACH BIT OF DATA IN A SEPARATE CAPACITOR WITHIN AN INTEGRATED CIRCUIT
DRAM (memory); Pseudostatic RAM; PSRAM; Pseudostatic Random Access Memory; Window RAM; Dynamic RAM; EDO RAM; Fast Page Mode DRAM; FPM RAM; FPM DRAM; Fast Page Mode RAM; BEDO (RAM); MDRAM; Row Access Strobe; Column Access Strobe; CAS access time; Precharge interval; Row address select; Column address select; 1T DRAM; DDRAM; D-RAM; EDO DRAM; Fast page mode; Page mode memory; Extended Data Out RAM; BEDO RAM; Burst EDO; Multibank DRAM; Intel 1102; Burst EDO DRAM; Memory Timing; Dynamic Random Access Memory; FPRAM; Dynamic random access memory; Extended data out DRAM; Extended Data Out DRAM; Dynamic Random access memory; Static column RAM; Memory row; DRAM row; Row activation; WRAM (memory); 1T1C; 1t1c; 3T1C; Page mode RAM; Page mode DRAM; DRAM; D. R. A. M.; D.R.A.M.; DRAM memory; Asynchronous DRAM; EDO memory; Fast page mode DRAM; Window DRAM; Video DRAM; Nibble mode; EDO SGRAM
  • [[MoSys]] MDRAM MD908
  • accessdate=2022-03-09}}</ref> (lower edge, right of middle).
  • 1 Mbit high speed [[CMOS]] pseudo static RAM, made by [[Toshiba]]
  • NMOS]] DRAM cell. It was patented in 1968.
  • die]] of a Samsung DDR-SDRAM 64MBit package
  • Inside a Samsung GDDR3 256&nbsp;MBit package
  • A 512 MBit [[Qimonda]] GDDR3 SDRAM package
  • Writing to a DRAM cell

EDID         
VESA STANDARD FOR METADATA DESCRIBING A COMPUTER MONITOR'S CAPABILITIES
EDID; CEA-861; Extended display identification data; CTA-861
Extended Display Identification Data [Additional explanations: standard] (Reference: VESA, DDC)
Extended Display Identification Data         
VESA STANDARD FOR METADATA DESCRIBING A COMPUTER MONITOR'S CAPABILITIES
EDID; CEA-861; Extended display identification data; CTA-861
Extended Display Identification Data (EDID) and Enhanced EDID (E-EDID) are metadata formats for display devices to describe their capabilities to a video source (e.g.

ويكيبيديا

Dynamic random-access memory

Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. The electric charge on the capacitors gradually leaks away; without intervention the data on the capacitor would soon be lost. To prevent this, DRAM requires an external memory refresh circuit which periodically rewrites the data in the capacitors, restoring them to their original charge. This refresh process is the defining characteristic of dynamic random-access memory, in contrast to static random-access memory (SRAM) which does not require data to be refreshed. Unlike flash memory, DRAM is volatile memory (vs. non-volatile memory), since it loses its data quickly when power is removed. However, DRAM does exhibit limited data remanence.

DRAM typically takes the form of an integrated circuit chip, which can consist of dozens to billions of DRAM memory cells. DRAM chips are widely used in digital electronics where low-cost and high-capacity computer memory is required. One of the largest applications for DRAM is the main memory (colloquially called the "RAM") in modern computers and graphics cards (where the "main memory" is called the graphics memory). It is also used in many portable devices and video game consoles. In contrast, SRAM, which is faster and more expensive than DRAM, is typically used where speed is of greater concern than cost and size, such as the cache memories in processors.

The need to refresh DRAM demands more complicated circuitry and timing than SRAM. This is offset by the structural simplicity of DRAM memory cells: only one transistor and a capacitor are required per bit, compared to four or six transistors in SRAM. This allows DRAM to reach very high densities with a simultaneous reduction in cost per bit. Refreshing the data consumes power and a variety of techniques are used to manage the overall power consumption.

DRAM had a 47% increase in the price-per-bit in 2017, the largest jump in 30 years since the 45% jump in 1988, while in recent years the price has been going down. In 2018, a "key characteristic of the DRAM market is that there are currently only three major suppliers — Micron Technology, SK Hynix and Samsung Electronics" that are "keeping a pretty tight rein on their capacity.” There is also Kioxia (previously Toshiba Memory Corporation after 2017 spin-off). Other manufacturers make and sell DIMMs (but not the DRAM chips in them), such as Kingston Technology, and some manufacturers that sell stacked DRAM (used e.g in the fastest exascale supercomputers), separately such as Viking Technology. Others sell such integrated into other products, such as Fujitsu into its CPUs, AMD in GPUs, and Nvidia, with HBM2 in some of their GPU chips.